Taheri’s Paper on Ultrafast In Situ TEM Characterization to Appear in Applied Physics Letters

Dr. Taheri’s paper, titled “In situ laser crystallization of amorphous silicon: Controlled nanosecond studies in the dynamic transmission electron microscope,” is scheduled for publication in an upcoming issue of Applied Physics Letters.

Abstract: We describe an in situ method for studying the influence of deposited laser energy on microstructural evolution during nanosecond laser driven crystallization of amorphous Si. By monitoring microstructural evolution as a function of deposited energy in a dynamic transmission electron microscope (DTEM), information on grain size and defect concentration can be correlated directly with processing conditions. This work demonstrates that DTEM studies are a promising approach for obtaining fundamental information on nucleation and growth processes that have technological importance for the development of thin film transistors.

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