Spurgeon publishes highlight on inverse spin Hall effect in MRS Bulletin

Steven Spurgeon has published a new research highlight in the Materials Research Society Bulletin‘s March 2012 issue. The article describes work by researchers utilizing the inverse spin Hall effect to probe spin-orbit coupling in materials with long spin lifetimes.

From the article: “Designers of next-generation electronics are trying to take advantage of both the electron’s charge and spin. The success of spintronic devices therefore hinges on the ability to convert between spin and charge currents. The direct spin Hall effect is typically used to probe spin-orbit coupling in these materials, but the technique cannot be applied to semiconductors with long spin lifetimes, such as indirect bandgap silicon. Researchers Kazuya Ando and Eiji Saitoh at Tohoku University in Sendai, Japan, have turned their attention to the inverse spin Hall effect (ISHE), which makes use of the high resistivity of semiconductors to detect tiny spin currents. Ando and Saitoh show that it is possible to study spin-orbit interactions using ISHE in otherwise unmeasurable systems. . . .”

The article can be viewed directly here or on the Materials Research Society Bulletin website.

The paper discussed in this article is available at Nature Communications.

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